s2381 to s2385 , s5139 , s8611 , S3884, s4315 series features l stable operation at low bias l high-speed response l high sensitivity and low noise applications l spatial light transmission l rangefinder photodiode si apd low bias operation, for 800 nm band 1 general ratings / absolute maximum ratings absolute maximum ratings active area * 2 size effective active area operating temperature topr storage temperature tstg type no. dimensional outline/ window material * 1 package (mm) (mm 2 ) (c) (c) s2381 0.2 0.03 s2382 ? /k s5139 ? /l s8611 ? /l 0.5 0.19 s2383 s2383-10 * 3 ? /k to-18 1.0 0.78 S3884 ? /k 1.5 1.77 s2384 ? /k to-5 3.0 7.0 s2385 ? /k to-8 5.0 19.6 -20 to +85 -55 to +125 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) breakdown voltage v br i d =100 a dark current * 4 i d spectral response range peak * 4 sensitivity wavelength p photo sensitivity s m=1 =800 nm quantum efficiency qe m=1 =800 nm temp. coefficient of v br cut-off * 4 frequency fc r l =50 ? terminal * 4 capacitance ct excess noise figure * 4 x =800 nm gain m =800 nm type no. (nm) (nm) (a/w) (%) typ. (v) max. (v) (v/c) typ. (na) max. (na) (mhz) (pf) s2381 0.05 0.5 1000 1.5 s2382 s5139 s8611 0.1 1 900 3 s2383 s2383-10 * 3 0.2 2 600 6 S3884 0.5 5 400 10 100 s2384 1 10 120 40 60 s2385 400 to 1000 800 0.5 75 150 200 0.65 330 40 95 0.3 40 *1: window material k: borosilicate glass, l: lens type borosilicate glass *2: active area in which a typical gain can be obtained *3: this is a variant of s2383 in which the device chip is light-shielded by aluminum coating except for the active area *4: measured under conditions that the device is operated at the gain listed in the specification table note) the following different breakdown voltage ranges are available. s2381, s2382, s5139, s8611, S3884: -01 (80 to 120 v), -02 (120 to 160 v), -03 (160 to 200 v) s2381-10: -10a (80 to 120 v), -10b (120 to 160 v), -10c (160 to 200 v)
si apd s2381 to s2385, s5139, s8611, S3884, s4315 series spectral response quantum efficiency vs. wavelength dark current vs. reverse voltage gain vs. reverse voltage kapdb0020eb kapdb0021ea kapdb0016ec kapdb0017ec wavelength (nm) photo sensitivity (a/w) (typ. ta = 25 ?c, =800 nm) 200 400 600 800 1000 40 20 0 50 30 10 m = 100 m = 50 wavelength (nm) quantum efficiency (%) 60 200 400 600 800 1000 40 20 0 80 100 (typ. ta=25 ? c ) (typ. ta = 25 ? c) s2384 S3884 s2382, s5139, s8611 s2381 s2383/ - 10 reverse voltage (v) dark current 0 50 100 150 200 1 pa 100 pa 1 na 10 na 10 pa 80 120 100 140 160 180 1 10 100 1000 10000 reverse voltage (v) gain ( typ. =800 nm) -20 ? c 0 ? c 20 ? c 40 ? c 60 ? c terminal capacitance vs. reverse voltage excess noise factor vs. gain (typ. ta = 25 ? c, f = 1 mhz) s2384 s2385 S3884 s2383/ - 10 s2382 s5139, s8611 s2381 reverse voltage (v) terminal capacitance 10 pf 100 pf 1 nf 50 100 1 pf 200 0 150 gain excess noise factor 110 1 10 (typ. ta = 25 ? c, f = 10 khz, b = 1 hz) 100 m 0.5 = 650 nm m 0.3 = 800 nm m 0.2 kapdb0018ec kapdb0022ea 2
si apd s2381 to s2385, s5139, s8611, S3884, s4315 series 2.54 0.2 case 1.2 max. 13 4.5 0.2 2.15 0.3 0.45 lead 4.65 0.1 5.4 0.2 2.8 kapda0010ea dimensional outlines (unit: mm) kapda0018ea 13 2.8 3.7 0.2 0.45 lead 4.7 0.1 5.4 0.2 2.54 0.2 case photosensitive surface window 2.0 min. 1.2 max. 0.4 max. 0.65 0.15 3.75 0.2 4.65 0.1 5.4 0.2 photosensitive surface 2.8 1.5 lens 13 0.45 lead 2.54 0.2 case 1.2 max. 0.4 max. kapda0031ea kapda0012ea kapda0013ed (20) 4.2 0.2 2.8 0.45 lead 8.1 0.1 photosensitive surface 9.1 0.2 5.08 0.2 case window 5.9 0.1 0.4 max. 1.5 max. the glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. index mark 1.4 (15) 4.9 0.2 3.1 0.45 lead 12.35 0.1 13.9 0.2 7.5 0.2 window 10.5 0.1 photosensitive surface case 0.5 max. 1.0 max. the glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. ? s2381, s2382, s2383/-10 ? s5139 ? s8611 ? s2384 ? s2385 3 kapda0011eb (20) 4.7 0.2 2.8 photosensitive surface 5.08 0.2 case 0.4 max. 1.5 max. 0.45 lead window 3.0 min. 9.1 0.2 8.2 0.1 ? S3884
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2010 hamamatsu photonics k.k. si apd s4315 series cat. no. kapd1007e09 may 2010 dn detector (anode) detector (cathode) te-cooler (-) te-cooler (+) thermistor window 10 0.2 14 0.2 15.3 0.2 1.9 0.2 6.4 0.2 12 min. 0.45 lead 10.2 0.2 5.1 0.2 5.1 0.2 photosensitive surface kapda0020eb dimensional outline (unit: mm) te-cooled type apd s4315 series 4 cooling characteristic of te-cooler kapdb0098ea 20 0 0.4 0.8 1.2 1.6 current (a) element temperature ( ? c) 0 -40 -60 -20 40 (typ. ta=25 ? c, thermal resistance of heatsink=3 ? c/w) current vs. voltage characteristic of te-cooler kapdb0100ea 1.2 voltage (v) current (a) 1.0 0.6 0 0.8 1.4 1.6 (typ. ta=25 ? c, thermal resistance of heatsink=3 ? c/w) 0.4 0.2 0 0.4 0.8 0.2 0.6 1.0 1.2 thermistor temperature characteristic kirdb0116ea element temperature ( ? c) resistance ( ? ) 10 3 (typ.) 10 4 10 5 10 6 -40 -20 0 20 parameter symbol condition s4315 s4315-01 s4315-02 s4315-04 unit apd - s2381 s2382 s2383 s2384 - effective active area * 5 - 0.2 0.5 1.0 3.0 mm spectral response range 400 to 1000 nm m=60 - 800 peak sensitivity wavelength p m=100 800 - nm cooling temperature ? t 35 c package - to-8 - *5: active area in which a typical gain can be obtained. we welcome y our re q uest for active areas different from those listed above.
|
